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AFT09S200W02GNR3
- Part No
- AFT09S200W02GNR3
- Manufacturer
- NXP
- Description
- RF Power Transistor, 716 to 960 MHz, 200 W, Typ Gain in dB is 19.2 @ 960 MHz, 28 V, LDMOS, SOT1815
- Datasheet
- AFT09S200W02GNR3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Frequency | 960 MHz |
| Gain | 19.2 dB |
| Max Operating Temperature | 125 °C |
| Min Operating Temperature | -40 °C |
| Output Power | 56 W |
| Packaging | Tape & Reel (TR) |
| Test Current | 1.4 A |
| Test Voltage | 28 V |
| Voltage Rating | 70 V |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 2 |
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