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A2T18H410-24SR6
- Part No
- A2T18H410-24SR6
- Manufacturer
- NXP
- Description
- RF MOSFET Transistors Airfast RF Power LDMOS Transistor 1805-1880 MHz, 71 W Avg., 28 V
- Datasheet
- A2T18H410-24SR6
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 10 µA |
| Frequency | 1.81 GHz |
| Gain | 17.4 dB |
| Gate to Source Voltage (Vgs) | 10 V |
| Max Operating Temperature | 225 °C |
| Min Operating Temperature | -40 °C |
| Output Power | 71 W |
| Packaging | Tape & Reel (TR) |
| Test Current | 800 mA |
| Test Voltage | 28 V |
| Voltage Rating | 65 V |
| Contact Plating | Gold |
| Mount | Surface Mount |
| Number of Pins | 6 |
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