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A2T09VD250NR1
- Part No
- A2T09VD250NR1
- Manufacturer
- NXP
- Description
- RF MOSFET Transistors Airfast, RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 48 V
- Datasheet
- A2T09VD250NR1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Frequency | 920 MHz |
| Gain | 22.5 dB |
| Gate to Source Voltage (Vgs) | 10 V |
| Max Operating Temperature | 225 °C |
| Min Operating Temperature | -40 °C |
| Output Power | 65 W |
| Test Current | 1 A |
| Test Voltage | 48 V |
| Voltage Rating | 105 V |
| Case/Package | TO-270-6 |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 6 |
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