AFV121KGSR5 Generic image

AFV121KGSR5

Part No
AFV121KGSR5
Manufacturer
NXP
Description
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1000 W Peak, 960-1215 MHz, 50 V
Datasheet
AFV121KGSR5
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Frequency 960 MHz
    Gain 18.5 dB
    Max Operating Temperature 225 °C
    Min Breakdown Voltage 112 V
    Min Operating Temperature -40 °C
    Number of Elements 2
    Output Power 1 kW
    Packaging Tape & Reel (TR)
    Test Current 100 mA
    Test Voltage 50 V
    Voltage Rating 112 V
    Body Material Ceramic
    Number of Terminals 4
    added to cart View cart