Generic image
AFT26H050W26SR3
- Part No
- AFT26H050W26SR3
- Manufacturer
- NXP
- Description
- RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Datasheet
- AFT26H050W26SR3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Frequency | 2.69 GHz |
| Gain | 14.2 dB |
| Gate to Source Voltage (Vgs) | 10 V |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -40 °C |
| Number of Elements | 1 |
| Output Power | 9 W |
| Packaging | Tape & Reel |
| Test Current | 100 mA |
| Test Voltage | 28 V |
| Voltage Rating | 65 V |
| Mount | Surface Mount |
| Number of Pins | 8 |
added to cart
View cart
Related Products