SUD08P06-155L-GE3 Generic image

SUD08P06-155L-GE3

Part No
SUD08P06-155L-GE3
Manufacturer
Vishay
Description
Single P-Channel 60 V 155 mOhm Surface Mount TrenchFET Power Mosfet - TO-252
Datasheet
SUD08P06-155L-GE3
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 8.2 A
    Drain to Source Breakdown Voltage -60 V
    Drain to Source Resistance 155 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Element Configuration Single
    Fall Time 7 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 450 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 20.8 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 1.7 W
    Rds On Max 155 mΩ
    Resistance 155 mΩ
    Rise Time 14 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage -2 V
    Turn-Off Delay Time 15 ns
    Turn-On Delay Time 5 ns
    Case/Package TO-252
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 1.437803 g
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