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IRFD210PBF
- Part No
- IRFD210PBF
- Manufacturer
- Vishay
- Description
- MOSFET N-CH 200V 600MA 4-DIP | Siliconix / Vishay IRFD210PBF
- Datasheet
- IRFD210PBF
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 600 mA |
| Current Rating | 600 mA |
| Drain to Source Breakdown Voltage | 200 V |
| Drain to Source Resistance | 1.5 Ω |
| Drain to Source Voltage (Vdss) | 200 V |
| Element Configuration | Single |
| Fall Time | 17 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 140 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 1 W |
| Min Breakdown Voltage | 200 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Bulk |
| Power Dissipation | 1 W |
| Rds On Max | 1.5 Ω |
| Resistance | 1.5 Ω |
| Rise Time | 17 ns |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | 4 V |
| Turn-Off Delay Time | 14 ns |
| Turn-On Delay Time | 8.2 ns |
| Voltage Rating (DC) | 200 V |
| Case/Package | DIP |
| Mount | Through Hole |
| Number of Pins | 4 |
| Number of Terminals | 4 |
| Height | 3.37 mm |
| Length | 5 mm |
| Width | 6.29 mm |
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