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SIA447DJ-T1-GE3
- Part No
- SIA447DJ-T1-GE3
- Manufacturer
- Vishay
- Description
- VISHAY - SIA447DJ-T1-GE3 - MOSFET Transistor, P Channel, 12 A, -12 V, 0.011 ohm, -4.5 V, -400 mV
- Datasheet
- SIA447DJ-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 12 A |
| Drain to Source Breakdown Voltage | -12 V |
| Drain to Source Resistance | 13.5 mΩ |
| Drain to Source Voltage (Vdss) | -12 V |
| Element Configuration | Single |
| Fall Time | 50 ns |
| Gate to Source Voltage (Vgs) | 8 V |
| Input Capacitance | 2.88 nF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 19 W |
| Min Breakdown Voltage | 12 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 3.5 W |
| Rds On Max | 13.5 mΩ |
| Rise Time | 60 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | -400 mV |
| Turn-Off Delay Time | 60 ns |
| Turn-On Delay Time | 30 ns |
| Mount | Surface Mount |
| Number of Pins | 6 |
| Number of Terminals | 3 |
| Height | 800 µm |
| Length | 2.05 mm |
| Width | 2.05 mm |
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