SI7716ADN-T1-GE3 Generic image

SI7716ADN-T1-GE3

Part No
SI7716ADN-T1-GE3
Manufacturer
Vishay
Description
Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V Rohs Compliant: No |Vishay SI7716ADN-T1-GE3.
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 12 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 13.5 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Fall Time 10 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 846 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 27.7 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 3.5 W
    Rds On Max 13.5 mΩ
    Resistance 13.5 mΩ
    Rise Time 12 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 2.5 V
    Turn-Off Delay Time 13 ns
    Turn-On Delay Time 15 ns
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 5
    Height 1.17 mm
    Length 3.05 mm
    Width 3.05 mm
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