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SI3447BDV-T1
- Part No
- SI3447BDV-T1
- Manufacturer
- Vishay
- Description
- Small Signal Field-Effect Transistor, 4.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- Datasheet
- SI3447BDV-T1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 4.5 A |
| Drain to Source Resistance | 40 mΩ |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2 W |
| Min Breakdown Voltage | 12 V |
| Number of Elements | 1 |
| Power Dissipation | 2 W |
| Case/Package | TSOP |
| Number of Pins | 6 |
| Number of Terminals | 6 |
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