Generic image
SI7621DN-T1-GE3
- Part No
- SI7621DN-T1-GE3
- Manufacturer
- Vishay
- Description
- MOSFET P-CH 20V 4A 1212-8 PPAK
- Datasheet
- SI7621DN-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 4 A |
| Drain to Source Resistance | 90 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Fall Time | 60 ns |
| Gate to Source Voltage (Vgs) | 12 V |
| Input Capacitance | 300 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 12.5 W |
| Min Breakdown Voltage | 20 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Tape & Reel (TR) |
| Power Dissipation | 3.1 W |
| Rds On Max | 90 mΩ |
| Rise Time | 75 ns |
| Turn-Off Delay Time | 25 ns |
| Turn-On Delay Time | 8 ns |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 5 |
added to cart
View cart
Related Products