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SQJ912EP-T1-GE3
- Part No
- SQJ912EP-T1-GE3
- Manufacturer
- Vishay
- Description
- Trans MOSFET N-CH 40V 8A 8-Pin PowerPAK SO T/R
- Datasheet
- SQJ912EP-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Upon a request
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 8 A |
| Drain to Source Breakdown Voltage | 40 V |
| Drain to Source Resistance | 14 mΩ |
| Drain to Source Voltage (Vdss) | 40 V |
| Element Configuration | Dual |
| Fall Time | 19 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 2.248 nF |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 48 W |
| Min Breakdown Voltage | 40 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 2 |
| Power Dissipation | 48 W |
| Rds On Max | 14 mΩ |
| Rise Time | 21 ns |
| Threshold Voltage | 1.8 V |
| Turn-Off Delay Time | 33 ns |
| Turn-On Delay Time | 7 ns |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 4 |
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