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SI4812DY-T1
- Part No
- SI4812DY-T1
- Manufacturer
- Vishay
- Description
- N-Channel 30-V (D-S) MOSFET with Schottky Diode
- Datasheet
- SI4812DY-T1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 6.9 A |
| Drain to Source Breakdown Voltage | 30 V |
| Drain to Source Resistance | 18 mΩ |
| Element Configuration | Single |
| Fall Time | 10 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Operating Temperature | 150 °C |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 1.4 W |
| Rise Time | 10 ns |
| Turn-Off Delay Time | 35 ns |
| Case/Package | SO |
| Number of Terminals | 8 |
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