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SI3442BDV-T1
- Part No
- SI3442BDV-T1
- Manufacturer
- Vishay
- Description
- Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Datasheet
- SI3442BDV-T1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Upon a request
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 3 A |
| Drain to Source Resistance | 57 mΩ |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 1.67 W |
| Min Breakdown Voltage | 20 V |
| Number of Elements | 1 |
| Number of Terminals | 6 |
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