SI7846DP Generic image

SI7846DP

Part No
SI7846DP
Manufacturer
Vishay
Description
Power Field-Effect Transistor, 4A I(D), 150V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet
SI7846DP
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4 A
    Drain to Source Resistance 50 mΩ
    Drain to Source Voltage (Vdss) 150 V
    Gate to Source Voltage (Vgs) 20 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 5.2 W
    Min Breakdown Voltage 150 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 1.9 W
    Resistance 6.7 Ω
    Threshold Voltage 4.5 V
    Number of Pins 8
    Number of Terminals 8
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