SPP04N50C3XKSA1 Generic image

SPP04N50C3XKSA1

Part No
SPP04N50C3XKSA1
Manufacturer
Infineon
Description
Single N-Channel 560 V 950 mOhm 22 nC CoolMOS™ Power Mosfet - TO-220-3
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4.5 A
    Drain to Source Breakdown Voltage 500 V
    Drain to Source Resistance 950 mΩ
    Drain to Source Voltage (Vdss) 500 V
    Element Configuration Single
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 470 pF
    Max Dual Supply Voltage 500 V
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 50 W
    Min Breakdown Voltage 500 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    On-State Resistance 950 mΩ
    Package Quantity 500
    Power Dissipation 50 W
    Rise Time 5 ns
    Turn-Off Delay Time 70 ns
    Turn-On Delay Time 10 ns
    Case/Package TO-220
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Height 20.7 mm
    Length 10.36 mm
    Width 4.57 mm
    added to cart View cart