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BSZ076N06NS3G
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Product Specification
| Specification | Value |
|---|---|
| Category | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs |
| Mfr | Infineon Technologies |
| Series | OptiMOS™ 3 |
| Package | Bulk |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 7.6mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 35µA |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 30 V |
| Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) |
| Temperature Range - Operating | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TSDSON-8 |
| Package / Case | 8-PowerVDFN |
| Standard Package | 5,000 pcs |
| MSL Level | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 0000.00.0000 |
| Win Source Part Number | 572312-BSZ076N06NS3G |
| Fake Threat In the Open Market | 54pct. |
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