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IPB65R190C6ATMA1
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Product Specification
| Specification | Value |
|---|---|
| Category | Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single |
| Mfr | Infineon Technologies |
| Series | CoolMOS™ |
| Package | Tape & Reel |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 730µA |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 100 V |
| Power Dissipation (Max) | 151W (Tc) |
| Temperature Range - Operating | -55°C ~ 150°C (TJ) |
| Mounting | SMD (SMT) |
| Supplier Device Package | PG-TO263-3 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Base Product Number | IPB65R |
| Other Names | IPB65R190C6DKR,IPB65R190C6-ND,IPB65R190C6CT-ND,IPB65R190C6ATMA1DKR,IPB65R190C6CT,IPB65R190C6ATMA1CT,IPB65R190C6,IPB65R190C6DKR-ND,IPB65R190C6TR-ND,IPB65R190C6ATMA1TR,IFEINFIPB65R190C6ATMA1,SP000863890,2156-IPB65R190C6ATMA1 |
| Standard Package | 1,000 |
| MSL Level | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Win Source Part Number | 1015297-IPB65R190C6ATMA1 |
| Fake Threat In the Open Market | 80 pct. |
| Product Status | Obsolete |
| REACH Status | REACH Unaffected |
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