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IPW60R099C7
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Product Specification
| Specification | Value |
|---|---|
| Win Source Part Number | 1378637-IPW60R099C7 |
| Fake Threat In the Open Market | 51 pct. |
| Temperature Range - Operating | -55°C ~ 150°C (TJ) |
| Category | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs |
| MSL Level | 1 (Unlimited) |
| Mfr | Infineon Technologies |
| Series | CoolMOS™ C7 |
| Package | Bulk |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 9.7A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 490µA |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1819 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247 |
| Package / Case | TO-247-3 |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
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