SPB03N60C3ATMA1 Generic image

SPB03N60C3ATMA1

Part No
SPB03N60C3ATMA1
Manufacturer
Infineon
Description
Trans MOSFET N-CH 600V 3.2A 3-Pin(2+Tab) D2PAK T/R
Datasheet
SPB03N60C3ATMA1
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3.2 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 1.4 Ω
    Drain to Source Voltage (Vdss) 600 V
    Fall Time 12 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 400 pF
    Max Dual Supply Voltage 600 V
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 38 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Tape & Reel
    Power Dissipation 38 W
    Rds On Max 1.4 Ω
    Rise Time 3 ns
    Turn-Off Delay Time 64 ns
    Turn-On Delay Time 7 ns
    Case/Package TO-263-3
    Mount Surface Mount
    Number of Terminals 2
    Height 4.5 mm
    added to cart View cart