IRF9321PBF Generic image

IRF9321PBF

Part No
IRF9321PBF
Manufacturer
Infineon
Description
P-Channel 30 V -15A 7.2 mOhm 2.5 W SMT Hexfet Power MosFet - SOIC-8
Datasheet
IRF9321PBF
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 15 A
    Drain to Source Breakdown Voltage -30 V
    Drain to Source Resistance 7.2 mΩ
    Drain to Source Voltage (Vdss) -30 V
    Element Configuration Single
    Fall Time 145 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 2.59 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs -1.8 V
    Number of Channels 1
    Number of Elements 1
    On-State Resistance 7.2 mΩ
    Package Quantity 3800
    Power Dissipation 2.5 W
    Rds On Max 7.2 mΩ
    Recovery Time 57 ns
    Rise Time 79 ns
    Threshold Voltage -1.8 V
    Turn-Off Delay Time 185 ns
    Turn-On Delay Time 21 ns
    Case/Package SOIC
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Height 1.75 mm
    Length 5 mm
    Width 4 mm
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