IPB015N08N5ATMA1 Generic image

IPB015N08N5ATMA1

Part No
IPB015N08N5ATMA1
Manufacturer
Infineon
Description
Trans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
Datasheet
IPB015N08N5ATMA1
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 180 A
    Drain to Source Breakdown Voltage 80 V
    Drain to Source Resistance 1.5 mΩ
    Drain to Source Voltage (Vdss) 80 V
    Element Configuration Single
    Fall Time 28 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 13 nF
    Max Dual Supply Voltage 80 V
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 375 W
    Min Breakdown Voltage 80 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    On-State Resistance 1.5 mΩ
    Package Quantity 1000
    Packaging Tape & Reel
    Power Dissipation 375 W
    Rds On Max 1.5 mΩ
    Rise Time 32 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 83 ns
    Turn-On Delay Time 33 ns
    Case/Package TO-263-7
    Mount Surface Mount
    Number of Pins 7
    Number of Terminals 6
    Weight 1.59999 g
    Height 4.5 mm
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