BCR533E6327HTSA1 Generic image

BCR533E6327HTSA1

Part No
BCR533E6327HTSA1
Manufacturer
Infineon
Description
BCR533 Series NPN 50 V 500 mA SMT Silicon Digital Transistor - SOT-23-3
Datasheet
BCR533E6327HTSA1
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 50 V
    Collector Emitter Breakdown Voltage 50 V
    Collector Emitter Saturation Voltage 300 mV
    Collector Emitter Voltage (VCEO) 50 V
    Current Rating 500 mA
    Element Configuration Single
    Gain Bandwidth Product 100 MHz
    hFE Min 70
    Input Resistance 10 kΩ
    Max Breakdown Voltage 50 V
    Max Collector Current 500 mA
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 330 mW
    Min Operating Temperature -65 °C
    Number of Elements 1
    Package Quantity 3000
    Packaging Tape & Reel
    Polarity NPN
    Power Dissipation 330 mW
    Schedule B 8541210080
    Transition Frequency 100 MHz
    Voltage Rating (DC) 50 V
    Case/Package SOT
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Height 1.1 mm
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