Generic image
BCR533E6327HTSA1
- Part No
- BCR533E6327HTSA1
- Manufacturer
- Infineon
- Description
- BCR533 Series NPN 50 V 500 mA SMT Silicon Digital Transistor - SOT-23-3
- Datasheet
- BCR533E6327HTSA1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Base Voltage (VCBO) | 50 V |
| Collector Emitter Breakdown Voltage | 50 V |
| Collector Emitter Saturation Voltage | 300 mV |
| Collector Emitter Voltage (VCEO) | 50 V |
| Current Rating | 500 mA |
| Element Configuration | Single |
| Gain Bandwidth Product | 100 MHz |
| hFE Min | 70 |
| Input Resistance | 10 kΩ |
| Max Breakdown Voltage | 50 V |
| Max Collector Current | 500 mA |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 330 mW |
| Min Operating Temperature | -65 °C |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape & Reel |
| Polarity | NPN |
| Power Dissipation | 330 mW |
| Schedule B | 8541210080 |
| Transition Frequency | 100 MHz |
| Voltage Rating (DC) | 50 V |
| Case/Package | SOT |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Height | 1.1 mm |
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