SIHU7N60E-GE3 Generic image

SIHU7N60E-GE3

Part No
SIHU7N60E-GE3
Manufacturer
Vishay
Description
VISHAY SIHU7N60E-GE3 Power MOSFET, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 7 A
    Drain to Source Resistance 600 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 14 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 680 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 78 W
    Min Breakdown Voltage 609 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 78 W
    Rds On Max 600 mΩ
    Rise Time 13 ns
    Threshold Voltage 2 V
    Turn-Off Delay Time 24 ns
    Turn-On Delay Time 13 ns
    Case/Package TO-251-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 329.988449 mg
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