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SI1400DL-T1-GE3
- Part No
- SI1400DL-T1-GE3
- Manufacturer
- Vishay
- Description
- Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor Fet |Vishay SI1400DL-T1-GE3
- Datasheet
- SI1400DL-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 1.6 A |
| Drain to Source Resistance | 150 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Element Configuration | Single |
| Fall Time | 8 ns |
| Gate to Source Voltage (Vgs) | 12 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 625 mW |
| Min Breakdown Voltage | 20 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Digi-Reel® |
| Power Dissipation | 568 mW |
| Rds On Max | 150 mΩ |
| Rise Time | 30 ns |
| Schedule B | 8541210080 |
| Turn-Off Delay Time | 14 ns |
| Turn-On Delay Time | 10 ns |
| Case/Package | SOT-363-6 |
| Mount | Surface Mount |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Weight | 7.512624 mg |
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