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SI4909DY-T1-GE3
- Part No
- SI4909DY-T1-GE3
- Manufacturer
- Vishay
- Description
- SI4909DY-T1-GE3 Dual P-channel MOSFET Transistor, 6.5 A, 40 V, 8-Pin SOIC | Siliconix / Vishay SI4909DY-T1-GE3
- Datasheet
- SI4909DY-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 8 A |
| Drain to Source Breakdown Voltage | -40 V |
| Drain to Source Resistance | 27 mΩ |
| Drain to Source Voltage (Vdss) | -40 V |
| Element Configuration | Dual |
| Fall Time | 13 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 2 nF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 3.2 W |
| Min Breakdown Voltage | 40 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Packaging | Cut Tape |
| Power Dissipation | 2 W |
| Rds On Max | 27 mΩ |
| Rise Time | 9 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | -1.2 V |
| Turn-Off Delay Time | 50 ns |
| Turn-On Delay Time | 10 ns |
| Case/Package | SOIC |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 8 |
| Weight | 506.605978 mg |
| Height | 1.75 mm |
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