SI1025X Generic image

SI1025X

Part No
SI1025X
Manufacturer
Vishay
Description
Small Signal Field-Effect Transistor, 0.19A I(D), P-Channel, Metal-oxide Semiconductor FET
Datasheet
SI1025X
Test Report
Available
Samples
Available

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    Availability:
    Upon a request

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 190 mA
    Drain to Source Resistance 4 Ω
    Gate to Source Voltage (Vgs) 20 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 280 mW
    Min Breakdown Voltage 60 V
    Number of Elements 2
    Power Dissipation 250 mW
    Number of Terminals 6
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