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SI7119DN-T1-E3
- Part No
- SI7119DN-T1-E3
- Manufacturer
- Vishay
- Description
- ; Gate Source Threshold Voltage Max:4V; Power Dissipation:52W; No. Of Pins:8Pins Rohs Compliant: No |Vishay SI7119DN-T1-E3.
- Datasheet
- SI7119DN-T1-E3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 1.2 A |
| Drain to Source Breakdown Voltage | -200 V |
| Drain to Source Resistance | 1.1 Ω |
| Element Configuration | Single |
| Fall Time | 12 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 666 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 52 W |
| Min Breakdown Voltage | 200 V |
| Min Operating Temperature | -50 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 3.7 W |
| Rds On Max | 1.05 Ω |
| Resistance | 1.05 Ω |
| Rise Time | 11 ns |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 27 ns |
| Turn-On Delay Time | 9 ns |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 5 |
| Height | 1.04 mm |
| Length | 3.05 mm |
| Width | 3.05 mm |
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