SI7114DN-T1-E3 Generic image

SI7114DN-T1-E3

Part No
SI7114DN-T1-E3
Manufacturer
Vishay
Description
MOSFET N-CH 30V 11.7A 1212-8
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 11.7 A
    Drain to Source Resistance 7.5 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Single
    Fall Time 10 ns
    Gate to Source Voltage (Vgs) 20 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 3.8 W
    Min Breakdown Voltage 1 V
    Min Operating Temperature -55 °C
    Nominal Vgs 1 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 1.5 W
    Rds On Max 7.5 mΩ
    Resistance 7.5 mΩ
    Rise Time 10 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 1 V
    Turn-Off Delay Time 45 ns
    Turn-On Delay Time 10 ns
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 5
    Height 1.04 mm
    Length 3.05 mm
    Width 3.05 mm
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