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SI4501BDY-T1-GE3
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Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 12 A |
| Drain to Source Resistance | 17 mΩ |
| Drain to Source Voltage (Vdss) | 8 V |
| Element Configuration | Dual |
| Fall Time | 9 ns |
| Gate to Source Voltage (Vgs) | 8 V |
| Input Capacitance | 805 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 4.5 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Packaging | Cut Tape |
| Rds On Max | 17 mΩ |
| Rise Time | 12 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | 800 mV |
| Turn-Off Delay Time | 35 ns |
| Turn-On Delay Time | 6 ns |
| Case/Package | SOIC |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 8 |
| Weight | 540.001716 mg |
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