QSC112 Generic image

QSC112

Part No
QSC112
Manufacturer
onsemi
Description
Phototransistor Ir Chip Plastic Silicon NPN Transistor 880NM
Datasheet
QSC112
Test Report
Available
Samples
Available

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    Availability:
    Upon a request

    Product Specification

    Specification Value
    Breakdown Voltage 30 V
    Collector Emitter Breakdown Voltage 30 V
    Collector Emitter Voltage (VCEO) 5 V
    Dark Current 100 nA
    Fall Time 5 µs
    Lens Style Domed
    Max Collector Current 9 mA
    Max Input Current 100 µA
    Max Operating Temperature 100 °C
    Max Power Dissipation 100 mW
    Min Operating Temperature -40 °C
    Number of Channels 1
    Number of Circuits 1
    Number of Elements 1
    Operating Supply Voltage 5 V
    Orientation Top View
    Output Power 100 mW
    Packaging Bulk
    Peak Wavelength 880 nm
    Polarity NPN
    Power Consumption 100 mW
    Power Dissipation 100 mW
    Rise Time 5 µs
    Viewing Angle 4 °
    Voltage Rating (DC) 30 V
    Wavelength 880 nm
    Case/Package T
    Lens Color Black, Clear
    Mount Through Hole
    Number of Pins 2
    Shape Round
    Weight 129.6 mg
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