QRE1113GR Generic image

QRE1113GR

Part No
QRE1113GR
Manufacturer
onsemi
Description
Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 1-Channel, Rectangular, Surface Mount
Datasheet
QRE1113GR
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Emitter Breakdown Voltage 30 V
    Collector Emitter Saturation Voltage 300 mV
    Collector Emitter Voltage (VCEO) 30 V
    Current Rating 20 mA
    Dark Current 1 nA
    Fall Time 20 µs
    Forward Current 50 mA
    Forward Voltage 1.2 V
    Input Current 50 mA
    Max Breakdown Voltage 30 V
    Max Collector Current 900 µA
    Max Operating Temperature 85 °C
    Max Output Voltage 30 V
    Max Power Dissipation 75 mW
    Max Supply Voltage 1.6 V
    Min Operating Temperature -40 °C
    Min Supply Voltage 1.2 V
    Number of Channels 1
    Number of Circuits 1
    Number of Elements 1
    Operating Supply Voltage 1.7 V
    Output Type Phototransistor
    Output Voltage 20 V
    Packaging Cut Tape
    Power Dissipation 75 mW
    Response Time 20 µs
    Reverse Breakdown Voltage 5 V
    Reverse Voltage (DC) 5 V
    Rise Time 20 µs
    Schedule B 8541408000, 8541408000|8541408000, 8541408000|8541408000|8541408000, 8541408000|8541408000|8541408000|8541408000
    Sensing Distance 1 mm
    Wavelength 940 nm
    Case/Package SMD/SMT
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 4
    Weight 78 mg
    Height 1.6 mm
    Length 3.4 mm
    Width 2.9 mm
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