QSB34GR Generic image

QSB34GR

Part No
QSB34GR
Manufacturer
onsemi
Description
Surface Mount Silicon Infrared PIN Photodiode
Datasheet
QSB34GR
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Dark Current 30 nA
    Diode Type PIN
    Element Configuration Single
    Fall Time 50 ns
    Max Operating Temperature 85 °C
    Max Power Dissipation 150 mW
    Max Reverse Voltage (DC) 32 V
    Min Breakdown Voltage 32 V
    Min Operating Temperature -25 °C
    Number of Circuits 1
    Peak Wavelength 940 nm
    Power Dissipation 150 mW
    Response Time 50 ns
    Reverse Breakdown Voltage 32 V
    Reverse Voltage 32 V
    Reverse Voltage (DC) 32 V
    Rise Time 50 ns
    Schedule B 8541406050|8541406050|8541406050|8541406050|8541406050|8541406050|8541406050|8541406050|8541406050|8541406050|8541406050|8541406050|8541406050|8541406050|8541406050|8541406050|8541406050|8541406050|8541406050|8541406050|8541406050|8541406050|8541406050|85
    Viewing Angle 120 °
    Wavelength 940 nm
    Case/Package PLCC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 2
    Shape Rectangular
    Weight 46.015 mg
    Height 1.8 mm
    Length 3 mm
    Width 3 mm
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