QSB363ZR Generic image

QSB363ZR

Part No
QSB363ZR
Manufacturer
onsemi
Description
Phototransistor IR Chip Plastic Silicon NPN Transistor 940nm 2-Pin T-3/4 T/R
Datasheet
QSB363ZR
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Collector Emitter Breakdown Voltage 30 V
    Collector Emitter Voltage (VCEO) 30 V
    Dark Current 100 nA
    Fall Time 15 µs
    Lens Style Domed
    Max Breakdown Voltage 30 V
    Max Collector Current 1.5 mA
    Max Operating Temperature 85 °C
    Max Power Dissipation 75 mW
    Min Operating Temperature -25 °C
    Number of Channels 1
    Number of Circuits 1
    Number of Elements 1
    Operating Supply Voltage 5 V
    Orientation Top View
    Output Power 75 mW
    Packaging Cut Tape
    Peak Wavelength 940 nm
    Polarity NPN
    Power Consumption 75 mW
    Power Dissipation 75 mW
    Rise Time 15 µs
    Viewing Angle 24 °
    Wavelength 940 nm
    Case/Package SMD/SMT
    Lens Color Black, Clear
    Mount Surface Mount
    Number of Pins 2
    Shape Round
    Weight 90 mg
    Height 1.58 mm
    Length 2.7 mm
    Width 2.2 mm
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