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MRFE6VP5600HR5
- Part No
- MRFE6VP5600HR5
- Manufacturer
- NXP
- Description
- RF Power Transistor, 1.8 to 600 MHz, 600 W, Typ Gain in dB is 24.6 @ 230 MHz, 50 V, LDMOS, SOT1787
- Datasheet
- MRFE6VP5600HR5
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Drain to Source Voltage (Vdss) | 130 V |
| Frequency | 230 MHz |
| Gain | 25 dB |
| Gate to Source Voltage (Vgs) | 10 V |
| Max Frequency | 600 MHz |
| Max Operating Temperature | 225 °C |
| Max Power Dissipation | 1.67 kW |
| Min Breakdown Voltage | 130 V |
| Min Operating Temperature | -65 °C |
| Number of Elements | 2 |
| Output Power | 600 W |
| Test Current | 100 mA |
| Test Voltage | 50 V |
| Voltage Rating | 130 V |
| Body Material | Ceramic |
| Contact Plating | Gold |
| Mount | Screw, Surface Mount |
| Number of Terminals | 4 |
| Weight | 13.155199 g |
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