MRF6VP3450HR5 Generic image

MRF6VP3450HR5

Part No
MRF6VP3450HR5
Manufacturer
NXP
Description
Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V
Datasheet
MRF6VP3450HR5
Test Report
Available
Samples
Available

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    Availability:
    Upon a request

    Product Specification

    Specification Value
    Drain to Source Voltage (Vdss) 110 V
    Frequency 860 MHz
    Gate to Source Voltage (Vgs) 10 V
    Max Frequency 860 MHz
    Max Operating Temperature 225 °C
    Max Output Power 90 W
    Min Breakdown Voltage 110 V
    Min Operating Temperature -65 °C
    Number of Elements 1
    Output Power 90 W
    Packaging Tape and Reel
    Power Gain 22.5 dB
    Test Current 1.4 A
    Test Voltage 50 V
    Voltage Rating 110 V
    Body Material Ceramic
    Mount Screw
    Number of Terminals 4
    Weight 13.192592 g
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