MRF6VP3091NR5 Generic image

MRF6VP3091NR5

Part No
MRF6VP3091NR5
Manufacturer
NXP
Description
RF Power Transistor, 470 to 1215 MHz, 90 W, Typ Gain in dB is 22 @ 860 MHz, 50 V, LDMOS, SOT1736
Datasheet
MRF6VP3091NR5
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Drain to Source Voltage (Vdss) 115 V
    Frequency 860 MHz
    Gain 22 dB
    Gate to Source Voltage (Vgs) 10 V
    Max Operating Temperature 150 °C
    Min Breakdown Voltage 115 V
    Number of Elements 2
    Output Power 18 W
    Test Current 350 mA
    Test Voltage 50 V
    Voltage Rating 115 V
    Case/Package TO-272-4
    Number of Pins 5
    Number of Terminals 4
    Weight 1.634945 g
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