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MRF6V12250HR5
- Part No
- MRF6V12250HR5
- Manufacturer
- NXP
- Description
- RF Power Transistor, 960 to 1215 MHz, 275 W, Typ Gain in dB is 20.3 @ 1030 MHz, 50 V, LDMOS, SOT1792
- Datasheet
- MRF6V12250HR5
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Drain to Source Breakdown Voltage | 110 V |
| Drain to Source Voltage (Vdss) | 110 V |
| Element Configuration | Single |
| Frequency | 1.03 GHz |
| Gain | 20.3 dB |
| Gate to Source Voltage (Vgs) | 10 V |
| Max Frequency | 1.215 GHz |
| Max Operating Temperature | 225 °C |
| Min Breakdown Voltage | 110 V |
| Min Operating Temperature | -65 °C |
| Number of Elements | 1 |
| Output Power | 275 W |
| Test Current | 100 mA |
| Test Voltage | 50 V |
| Voltage Rating | 100 V |
| Body Material | Ceramic |
| Contact Plating | Gold |
| Mount | Screw, Surface Mount |
| Number of Pins | 2 |
| Number of Terminals | 2 |
| Weight | 6.424994 g |
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