IRFS630B Generic image

IRFS630B

Part No
IRFS630B
Manufacturer
Fairchild Semiconductor
Description
9A, 200V, 0.4OHM, N-CHANNEL MOSF
Datasheet
IRFS630B
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 9 A
    Drain to Source Breakdown Voltage 200 V
    Drain to Source Resistance 400 mΩ
    Drain to Source Voltage (Vdss) 200 V
    Gate to Source Voltage (Vgs) 30 V
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 38 W
    Min Breakdown Voltage 200 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 38 W
    Turn-Off Delay Time 60 ns
    Turn-On Delay Time 11 ns
    Case/Package TO-220-3
    Number of Terminals 3
    Height 19.5 mm
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