FDS6162N3 Generic image

FDS6162N3

Part No
FDS6162N3
Manufacturer
Fairchild Semiconductor
Description
MOSFET N-CH 20V 21A 8-SOIC / Trans MOSFET N-CH 20V 21A 8-Pin FLMP SOIC T/R
Datasheet
FDS6162N3
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 21 A
    Current Rating 21 A
    Drain to Source Breakdown Voltage 20 V
    Drain to Source Resistance 4.5 mΩ
    Drain to Source Voltage (Vdss) 20 V
    Fall Time 55 ns
    Gate to Source Voltage (Vgs) 12 V
    Input Capacitance 5.521 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 3 W
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 3 W
    Rds On Max 4.5 mΩ
    Rise Time 25 ns
    Turn-Off Delay Time 85 ns
    Turn-On Delay Time 20 ns
    Voltage Rating (DC) 20 V
    Case/Package SOIC
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Height 1.6 mm
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