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FDS2170N7
- Part No
- FDS2170N7
- Manufacturer
- Fairchild Semiconductor
- Description
- MOSFET N-CH 200V 3A 8-SOIC
- Datasheet
- FDS2170N7
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 3 A |
| Current Rating | 3 A |
| Drain to Source Breakdown Voltage | 200 V |
| Drain to Source Resistance | 128 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Fall Time | 23 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.292 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 3 W |
| Min Breakdown Voltage | 200 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 3 W |
| Rds On Max | 128 mΩ |
| Rise Time | 5 ns |
| Turn-Off Delay Time | 30 ns |
| Voltage Rating (DC) | 200 V |
| Case/Package | SOIC |
| Mount | Surface Mount |
| Number of Terminals | 8 |
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