FQPF5N80 Generic image

FQPF5N80

Part No
FQPF5N80
Manufacturer
Fairchild Semiconductor
Description
MOSFET N-CH 800V 2.8A TO-220F
Datasheet
FQPF5N80
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2.8 A
    Current Rating 2.8 A
    Drain to Source Breakdown Voltage 800 V
    Drain to Source Resistance 2.6 Ω
    Drain to Source Voltage (Vdss) 800 V
    Element Configuration Single
    Fall Time 40 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 1.25 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 47 W
    Min Breakdown Voltage 800 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 47 W
    Rds On Max 2.6 Ω
    Rise Time 60 ns
    Turn-Off Delay Time 55 ns
    Voltage Rating (DC) 800 V
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
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