FQPF47P06 Generic image

FQPF47P06

Part No
FQPF47P06
Manufacturer
onsemi
Description
Power MOSFET, P-Channel, QFET®, -60 V, -30 A, 26 mΩ, TO-220F
Datasheet
FQPF47P06
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 30 A
    Current Rating -30 A
    Drain to Source Breakdown Voltage -60 V
    Drain to Source Resistance 26 mΩ
    Drain to Source Voltage (Vdss) -60 V
    Element Configuration Single
    Fall Time 195 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 3.6 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 62 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape (CT)
    Power Dissipation 62 W
    Rds On Max 26 mΩ
    Rise Time 450 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage -4 V
    Turn-Off Delay Time 100 ns
    Turn-On Delay Time 50 ns
    Voltage Rating (DC) -60 V
    Case/Package TO-220-3
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 2.27 g
    Height 19.5 mm
    Length 10.16 mm
    Width 4.7 mm
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