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FQPF4N90CT
- Part No
- FQPF4N90CT
- Manufacturer
- onsemi
- Description
- Power Mosfet, N-channel, Qfet®, 900 V, 4 A, 4.2 Ω, TO-220F
- Datasheet
- FQPF4N90CT
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 4 A |
| Drain to Source Voltage (Vdss) | 900 V |
| Element Configuration | Single |
| Fall Time | 35 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 960 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 47 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 47 W |
| Rds On Max | 4.2 Ω |
| Rise Time | 50 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 40 ns |
| Turn-On Delay Time | 25 ns |
| Case/Package | TO-220-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Weight | 2.27 g |
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