FQPF5N50CYDTU Generic image

FQPF5N50CYDTU

Part No
FQPF5N50CYDTU
Manufacturer
onsemi
Description
Power Mosfet, N-channel, Qfet®, 500 V, 5 A, 1.4 Ω, TO-220F
Datasheet
FQPF5N50CYDTU
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 5 A
    Current Rating 5 A
    Drain to Source Breakdown Voltage 500 V
    Drain to Source Resistance 1.4 Ω
    Drain to Source Voltage (Vdss) 500 V
    Element Configuration Single
    Fall Time 48 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 625 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 38 W
    Min Breakdown Voltage 500 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 38 W
    Rds On Max 1.4 Ω
    Rise Time 46 ns
    Turn-Off Delay Time 50 ns
    Turn-On Delay Time 12 ns
    Voltage Rating (DC) 500 V
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 2.565 g
    Height 19.4 mm
    Length 10.16 mm
    Width 4.7 mm
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