Generic image
FJX2907ATF
- Part No
- FJX2907ATF
- Manufacturer
- onsemi
- Description
- Bipolar Transistors - BJT PNP Epitaxial Transistor
- Datasheet
- FJX2907ATF
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Base Voltage (VCBO) | -60 V |
| Collector Emitter Breakdown Voltage | 60 V |
| Collector Emitter Saturation Voltage | -1.6 V |
| Collector Emitter Voltage (VCEO) | 60 V |
| Current Rating | -600 mA |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | -5 V |
| Frequency | 200 MHz |
| Gain Bandwidth Product | 200 MHz |
| hFE Min | 100 |
| Max Breakdown Voltage | 60 V |
| Max Collector Current | 600 mA |
| Max Frequency | 200 MHz |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 350 mW |
| Number of Elements | 1 |
| Packaging | Tape & Reel |
| Polarity | PNP |
| Power Dissipation | 325 mW |
| Schedule B | 8541210080, 8541210080|8541210080, 8541210080|8541210080|8541210080, 8541210080|8541210080|8541210080|8541210080 |
| Transition Frequency | 200 MHz |
| Voltage Rating (DC) | -60 V |
| Case/Package | SOT-323 |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 30 mg |
| Height | 900 µm |
| Length | 2 mm |
| Width | 1.25 mm |
added to cart
View cart
Related Products