FJV992FMTF Generic image

FJV992FMTF

Part No
FJV992FMTF
Manufacturer
onsemi
Description
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon
Datasheet
FJV992FMTF
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) -120 V
    Collector Emitter Breakdown Voltage -120 V
    Collector Emitter Saturation Voltage -300 mV
    Collector Emitter Voltage (VCEO) 120 V
    Current Rating -50 mA
    Element Configuration Single
    Emitter Base Voltage (VEBO) -5 V
    Frequency 50 MHz
    Gain Bandwidth Product 50 MHz
    hFE Min 300
    Max Breakdown Voltage 120 V
    Max Collector Current 50 mA
    Max Frequency 50 MHz
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 300 mW
    Min Operating Temperature -55 °C
    Number of Elements 1
    Polarity PNP
    Power Dissipation 300 mW
    Schedule B 8541210080, 8541210080|8541210080, 8541210080|8541210080|8541210080, 8541210080|8541210080|8541210080|8541210080
    Transition Frequency 50 MHz
    Voltage Rating (DC) -120 V
    Case/Package SOT-23
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Weight 30 mg
    Height 1.11 mm
    Length 2.9 mm
    Width 1.3 mm
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