FJX1182YTF Generic image

FJX1182YTF

Part No
FJX1182YTF
Manufacturer
onsemi
Description
Transistor, bjt, pnp, 30V V(Br)Ceo, 500Ma I(C), sot-323 Rohs Compliant: Yes
Datasheet
FJX1182YTF
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) -35 V
    Collector Emitter Breakdown Voltage 30 V
    Collector Emitter Saturation Voltage -100 mV
    Collector Emitter Voltage (VCEO) 30 V
    Current Rating -500 mA
    Element Configuration Single
    Emitter Base Voltage (VEBO) -5 V
    Frequency 200 MHz
    Gain Bandwidth Product 200 MHz
    hFE Min 120
    Max Breakdown Voltage 30 V
    Max Collector Current 500 mA
    Max Operating Temperature 150 °C
    Max Power Dissipation 150 mW
    Min Operating Temperature -55 °C
    Number of Elements 1
    Polarity PNP
    Power Dissipation 150 mW
    Transition Frequency 200 MHz
    Voltage Rating (DC) -30 V
    Case/Package SOT-323
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Weight 30 mg
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