FDPF39N20 Generic image

FDPF39N20

Part No
FDPF39N20
Manufacturer
onsemi
Description
N-Channel Power MOSFET, UniFETTM, 200V, 39A, 66mΩ, TO-220F
Datasheet
FDPF39N20
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 39 A
    Drain to Source Breakdown Voltage 200 V
    Drain to Source Resistance 66 mΩ
    Drain to Source Voltage (Vdss) 200 V
    Element Configuration Single
    Fall Time 150 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 2.13 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 37 W
    Min Breakdown Voltage 200 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 37 W
    Rds On Max 66 mΩ
    Resistance 66 MΩ
    Rise Time 160 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 5 V
    Turn-Off Delay Time 150 ns
    Turn-On Delay Time 30 ns
    Case/Package TO-220AB
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 2.27 g
    Height 19.5 mm
    Length 10.36 mm
    Width 4.9 mm
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