FDPF3860T Generic image

FDPF3860T

Part No
FDPF3860T
Manufacturer
onsemi
Description
In a Pack of 10, N-Channel MOSFET, 20 A, 100 V, 3-Pin TO-220F ON Semiconductor FDPF3860T
Datasheet
FDPF3860T
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 20 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 38.2 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Single
    Fall Time 7 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.8 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 33.8 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 33.8 W
    Rds On Max 38.2 mΩ
    Resistance 3.802 GΩ
    Rise Time 17 ns
    Schedule B 8541290080
    Threshold Voltage 2.5 V
    Turn-Off Delay Time 24 ns
    Turn-On Delay Time 15 ns
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 2.27 g
    Height 19.5 mm
    Length 10.36 mm
    Width 4.9 mm
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